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62 résultats
Silicon Carbide and Related Materials 2021Materials Science Forum, 1062, 2022, ⟨10.4028/v-xsbd1h⟩
Proceedings/Recueil des communications
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and DarlingtonsMaterials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
Article dans une revue
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès
hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862v1
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BJT static behavior improvement by modification of the epitaxial layer27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82
Communication dans un congrès
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodesECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès
hal-01985994v1
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Design of a test package for high voltage SiC diodesProceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩
Communication dans un congrès
hal-03772006v1
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diodeInternational Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Communication dans un congrès
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Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
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Multiphysics Characterizations of Vertical GaN Schottky Diodes2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès
hal-03844585v1
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High temperature anti short circuit function for normally-on SiC JFET in an inverter leg configurationHiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760372v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC ApplicationsMaterials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩
Article dans une revue
hal-01391838v1
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Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar DiodesMaterials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩
Article dans une revue
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Micro-Raman Spectroscopy Study of Vertical GaN Schottky DiodeCrystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩
Article dans une revue
hal-04099071v1
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Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF13th IEEE PEDS, Jul 2019, Toulouse, France
Communication dans un congrès
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04150168v1
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Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodesInternational Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States
Communication dans un congrès
hal-02132576v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
hal-04221605v1
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Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04401362v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor TargetRomanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Article dans une revue
hal-04276812v1
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3D TCAD Simulations for More Efficient SiC Power Devices DesignElectro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩
Communication dans un congrès
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Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar DiodeMaterials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩
Article dans une revue
hal-01818806v1
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Vertical pin diodes on large freestanding (100) diamond film2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France
Communication dans un congrès
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) techniqueICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04218429v1
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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductorsMaterials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩
Article dans une revue
hal-02053053v1
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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor DevicesWorkshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France
Communication dans un congrès
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Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors OperationIEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩
Article dans une revue
hal-01636430v1
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Optimisation de la terminaison d'une diode Schottky diamant haute tensionSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065274v1
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Towards SiC thyristors with amplifying gate designSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02983373v1
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